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| RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs [ /Title These are N-channel enhancement-mode silicon-gate [ /Title (RFM4N power field effect transistors designed for applications such () 35, as switching regulators, switching converters, motor drivers, /SubRFM4N relay drivers, and drivers for high power bipolar switching ject () 40, /Autho transistors requiring high speed and low gate-drive power. RFP4N3 These types can be operated directly from integrated () circuits. 5, /KeyRFP4N4 Formerly developmental type TA17404. ords 0) ) Ordering Information /Subject /CrePART NUMBER PACKAGE BRAND 4A,() tor RFM4N35 TO-204AA RFM4N35 50V /DOCI RFM4N40 TO-204AA RFM4N40 nd FO RFP4N35 TO-220AB RFP4N35 00V, dfRFP4N40 TO-220AB RFP4N40 .000 ark NOTE: When ordering, use the entire part number. hm, Nhannel ower /Page- Packaging OSode JEDEC TO-204AA ETs) /Use/Author utDRAIN ) ines (FLANGE) /Key/DOCords IEW Harris dfemiark onducSOURCE (PIN 2) or, NGATE (PIN 1) hannel ower OSETs, O04AA, O20AB) /Creator ) Features * 4A, 350V and 400V * rDS(ON) = 2.000 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 RFM4N35, RFM4N40, RFP4N35, RFP4N40 TC = 25oC Unless Otherwise Specified RFM4N35 350 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . VDGR 350 Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 4 Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8 Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 150 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . TL 300 Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .Tpkg 260 Absolute Maximum Ratings RFM4N40 400 400 4 8 20 75 0.6 -55 to 150 300 260 RFP4N35 350 350 4 8 20 60 0.48 -55 to 150 300 260 RFP4N40 400 400 4 8 20 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 400 350 VGS(TH) IDSS VGS = VDS , ID = 250A (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS , TC = 125oC 2 VDS = 25V, VGS = 0V f = 1MHz (Figure 9) RFM4N35, RFM4N40 RFP4N35, RFP4N40 12 42 130 62 4 1 25 100 2.000 8 45 60 200 100 750 150 100 1.67 2.083 V V V A A nA V ns ns ns ns pF pF pF oC/W oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM4N40, RFP4N40 RFM4N35, RFP4N35 Gate Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On-Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) tD(ON) tr tD(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0 ID = 4A, VGS = 10V (Figures 6, 7) ID = 4A, VGS = 10V VDD = 200V, ID = 2A, RG = 50 RL = 100, VGS = 10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recorvery Time NOTES: 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 800 MAX 1.4 UNITS V ns 2 RFM4N35, RFM4N40, RFP4N35, RFP4N40 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 5 4 RFM4N35, RFM4N40 3 RFP4N35, RFP4N40 2 0.8 0.6 0.4 0.2 0 1 0 50 100 150 0 25 50 TC , CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TC = 25OC TJ = MAX RATED ID , DRAIN CURRENT (A) RFM4N35, 40 RFP4N35, 40 7 6 5 4 3 2 1 TC = 25oC 80s PULSE TEST DUTY CYCLE 2% VGS = 20 V VGS = 8 - 10V VGS = 7V VGS = 6V ID , DRAIN CURRENT (A) 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VGS = 5V RFM4N35, RFP4N35 RFM4N40, RFP4N40 0.1 1 VGS = 4V 10 100 VDS , DRAIN TO SOURCE VOLTAGE 1000 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 25 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 8 7 ID, DRAIN CURRENT (A) 6 5 4 3 2 1 0 0 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () VDS = 20V PULSE DURATION = 80s DUTY CYCLE 2% 4 TC = 125oC 3 VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 2 TC = 25oC TC = -40oC TC = 125oC TC = -40oC 1 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 VGS , GATE TO SOURCE VOLTAGE (V) ID , DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFM4N35, RFM4N40, RFP4N35, RFP4N40 Typical Performance Curves 2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 4A VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE 1.5 (Continued) 1.5 VDS = 10V ID = 250A 1 1 0.5 0.5 0 -50 0 50 100 150 200 TJ , JUNCTION TEMPERATURE (oC) 0 -50 0 50 125 150 175 TJ, JUNCTION TEMPERATURE (0C) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VDS, DRAIN TO SOURCE VOLTAGE (V) 800 700 C, CAPACITANCE (pF) 600 500 400 300 200 100 CRSS 0 0 10 20 30 40 50 VDS , DRAIN TO SOURCE (V) COSS CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 500 10 VGS, GATE TO SOURCE VOLTAGE (V) 375 VDD = BVDSS 250 GATE TO VDD = BVDSS SOURCE VOLTAGE RL=100 IG(REF) = 0.45mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8 6 4 125 2 DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) IG(REF) 80 IG(ACT) 0 t, TIME (s) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 |
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